Calculation of the structural parameters of solid-state electronic devices

被引：0

作者：

V. M. Bogomol’nyi

机构：

[1] Moscow State University of Service,

来源：

Measurement Techniques | 2007年 / 50卷

关键词：

electric strength; dielectric; field-effect transistor; cluster; roughness; surface; interphase boundary; dielectric electronics;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The effect of the electron subsystem on the chemical bond and the formation of the smallest solid particle (a cluster) is considered. A formula is given for determining its size, characterizing the distribution of the electric, temperature and mechanical fields in thin-layer heterogeneous structures.

引用

页码：429 / 433

页数：4

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