Quantitative strain analysis of InAs/GaAs quantum dot materials

被引：0

作者：

Per Erik Vullum

Magnus Nord

Maryam Vatanparast

Sedsel Fretheim Thomassen

Chris Boothroyd

Randi Holmestad

Bjørn-Ove Fimland

Turid Worren Reenaas

机构：

[1] Materials and Chemistry,Department of Physics

[2] SINTEF,Department of Electronic Systems

[3] Norwegian University of Science and Technology- NTNU,undefined

[4] Nanyang Technological University,undefined

[5] School of Materials Science and Engineering,undefined

[6] Norwegian University of Science and Technology- NTNU,undefined

来源：

Scientific Reports | / 7卷

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摘要：

Geometric phase analysis has been applied to high resolution aberration corrected (scanning) transmission electron microscopy images of InAs/GaAs quantum dot (QD) materials. We show quantitatively how the lattice mismatch induced strain varies on the atomic scale and tetragonally distorts the lattice in a wide region that extends several nm into the GaAs spacer layer below and above the QDs. Finally, we show how V-shaped dislocations originating at the QD/GaAs interface efficiently remove most of the lattice mismatch induced tetragonal distortions in and around the QD.

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