Quantitative strain analysis of InAs/GaAs quantum dot materials

被引：0
作者：
Per Erik Vullum
Magnus Nord
Maryam Vatanparast
Sedsel Fretheim Thomassen
Chris Boothroyd
Randi Holmestad
Bjørn-Ove Fimland
Turid Worren Reenaas
机构：
[1] Materials and Chemistry,Department of Physics
[2] SINTEF,Department of Electronic Systems
[3] Norwegian University of Science and Technology- NTNU,undefined
[4] Nanyang Technological University,undefined
[5] School of Materials Science and Engineering,undefined
[6] Norwegian University of Science and Technology- NTNU,undefined
来源：
Scientific Reports | / 7卷
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摘要：
Geometric phase analysis has been applied to high resolution aberration corrected (scanning) transmission electron microscopy images of InAs/GaAs quantum dot (QD) materials. We show quantitatively how the lattice mismatch induced strain varies on the atomic scale and tetragonally distorts the lattice in a wide region that extends several nm into the GaAs spacer layer below and above the QDs. Finally, we show how V-shaped dislocations originating at the QD/GaAs interface efficiently remove most of the lattice mismatch induced tetragonal distortions in and around the QD.
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