Electroluminescence orientation in InGaN/GaN LED on nano-patterned sapphire by MOCVD

被引：0
|
作者：
Tianya Tan
Mitsuaki Tohno
Masakazu Matsumoto
Yoshiki Naoi
Shiro Sakai
机构：
[1] Liaoning University,Department of Physics
[2] Tokushima University,Graduate School of Advanced Technology and Science
来源：
Journal of Wuhan University of Technology-Mater. Sci. Ed. | 2012年 / 27卷
关键词：
LED; nano-pattern; GaN; electroluminescence;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
A 385 nm InGaN/GaN LED on the sapphire with the nano-pattern was fabricated and its electroluminescence property was investigated in a three-dimensional (3D) space. The experimental results showed that the luminescent intensity of the LED was obviously oriented based on the nano-pattern of the sapphire substrate. And the optical interference was used to explain the luminescence orientation of the LED on the nano-patterned substrate.
引用
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页码：1137 / 1138
页数：1
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