Full-band particle-based analysis of device scaling for 3D tri-gate FETs

被引：0
作者：
Chiney P. [1 ]
Branlard J. [1 ]
Aboud S. [2 ]
Saraniti M. [1 ]
Goodnick S. [3 ]
机构：
[1] Electrical and Computer Engineering Department, Illinois Institute of Technology, Chicago
[2] Electrical and Computer Engineering Department, Worcester Polytechnic Institute, Worcester
[3] Department of Electrical Engineering, Arizona State University, Tempe
来源：
Journal of Computational Electronics | 2005年 / 4卷 / 1-2期
关键词：
Frequency analysis; Monte Carlo simulation; Omega FET; p-FETs; Scaling; Tri-gate FETs;
D O I：
10.1007/s10825-005-7105-x
中图分类号：
学科分类号：
摘要：
In this work, a 25 nm gate length three-dimensional tri-gate SOI FET with a wrap around gate geometry is studied using a full-band particle-based simulation tool. The tri-gate FETs have shown superior scalability over planar device structures, reduction of short channel effects, higher drive currents and excellent gate-channel controllability compared to their planar counterparts. Simulations were performed by scaling the length and the width of the tri-gate SOI FET channel to study its short-channel and short-width effects. The influence of the scaling on the dynamic response has also been explored by performing a frequency analysis on the device. © 2005 Springer Science + Business Media, Inc.
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收藏
页码：45 / 49
页数：4
相关论文
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