Influence of natural aging on photoluminescence from porous silicon

被引：0
|
作者：
A. S. Len’shin
V. M. Kashkarov
S. Yu. Turishchev
M. S. Smirnov
E. P. Domashevskaya
机构：
[1] Voronezh State University,
来源：
Technical Physics | 2012年 / 57卷
关键词：
Porous Silicon; Natural Aging; Photo Luminescence; Hydrogen Fluoride; Photo Luminescence Spectrum;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The influence of natural aging on the photoluminescence intensity and the position of a photolu-minescence peak in n-type por-Si (por-Si) is studied. The variation of the phase composition and the relative content of the amorphous and oxide phases of silicon in por-Si during aging is determined by fitting simulated spectra to experimental ultrasoft Si L2,3 X-ray emission spectra using reference spectra.
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页码：305 / 307
页数：2
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