Segregation Behavior of Impurities in Gallium during Directional Solidification

被引：0

作者：

S. A. Kozlov

N. A. Potolokov

A. V. Gusev

V. A. Fedorov

机构：

[1] Research Institute of Electronic Materials,Russian Academy of Sciences

[2] Institute of Chemistry of High-Purity Substances,undefined

[3] Kurnakov Institute of General and Inorganic Chemistry,undefined

[4] Russian Academy of Sciences,undefined

来源：

Inorganic Materials | 2003年 / 39卷

关键词：

Inorganic Chemistry; Gallium; Directional Solidification; Multicomponent System; Planar Defect;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The effective solid–liquid segregation coefficients of impurities in Ga were measured in binary and multicomponent gallium–impurity (Sn, In, Cu, Ge, Ag) systems. The results demonstrate that the introduction of Sn into both binary and multicomponent systems notably increases the effective segregation coefficients of the other impurities. The likely reason is that the presence of Sn leads to the formation of linear and planar defects, which gives rise to nonequilibrium impurity trapping by the growing gallium crystal.

引用

页码：452 / 454

页数：2