Photoluminescence properties of thallium-containing GeSe2 and GeSe3 vitreous semiconductors

被引:0
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作者
A. A. Babaev
机构
[1] Russian Academy of Sciences,Institute of Physics, Dagestan Scientific Center
来源
Semiconductors | 2016年 / 50卷
关键词
Intrinsic Defect; Photoluminescence Property; GeSe; Amorphous Semiconductor; Liquid Semiconductor;
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摘要
The photoluminescence properties of thallium-containing vitreous semiconductor systems with stoichiometric and nonstoichiometric compositions (GeSe2)1–xTlx and (GeSe3)1–xTlx (0 ⩽ x ⩽ 0.1) are studied at a temperature of T = 77 K. Intrinsic defects with negative correlation energy are responsible for the Gaussian shape of the photoluminescence spectra. It is established that an increase in x in the systems does not affect the shape of the spectrum, does not generate new emission bands, shifts the photoluminescence spectra to the region of low energies, reduces the intensity of radiation, and increases its half-width. Kinetics of the fatigue of photoluminescence is different for both systems and is characterized by one curve irrespective of Tl content in the systems.
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页码:158 / 161
页数:3
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