The circuit and functional blocks for radiation-hard transceiver LSICs in SOI CMOS

被引：4
作者：
Nazarova G.N. [1 ,2 ]
Elesin V.V. [1 ,2 ]
Nikiforov A.Y. [1 ,2 ]
Kuznetsov A.G. [1 ,2 ]
Usachev N.A. [1 ,2 ]
Amburkin D.M. [1 ,2 ]
机构：
[1] National Research Nuclear University MEPhI (Moscow Engineering Physics Institute), Kashirskoe sh. 31, Moscow
[2] JSC Experimental Research and Production Association of Specialized Electronic Systems (JSC ENPO SPELS), Kashirskoye sh. 31, Moscow
来源：
Nazarova, G.N. (gnnaz@spels.ru) | 1600年 / Maik Nauka Publishing / Springer SBM卷 / 45期
关键词：
Ionizing radiation;
D O I：
10.1134/S106373971601008X
中图分类号：
学科分类号：
摘要：
The results of designing a set of basic circuit and functional blocks (amplifying, oscillating, mixing, etc.) to construct the radiation-hard transceiver CMOS Silicon-on-Insulator (SOI) large-scale integration circuits (LSICs) are presented. It was established experimentally that the test chips of the circuit and functional blocks (CFBs) produced by domestic CMOS SOI technologies at a feature size of 0.35 µm are functionally operable in the frequency range of 1 MHz to 1.8 GHz, and the values of the main parameters are close to the calculated ones. The results of the experimental research on the hardness of the developed CFBs to pulse and dose impact of ionizing radiation are presented and the hardness levels were evaluated. © 2016, Pleiades Publishing, Ltd.
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页码：68 / 76
页数：8
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