Electrical Properties of Carbon Black and Ruthenium Dioxide Embedded Silica Films

被引：0
作者：
Th. Hübert
A. Shimamura
A. Klyszcz
机构：
[1] Federal Institute for Materials Research and Testing,
来源：
Journal of Sol-Gel Science and Technology | 2004年 / 32卷
关键词：
sol–gel; thin films; carbon black; ruthenium dioxide; percolation phenomena;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The electrical properties of sol–gel-derived films can be tailored by embedding conductive particles of ruthenium dioxide or carbon black in an insulating amorphous SiO2 silica matrix. The preparation process included an acid hydrolysis of tetraethoxysilane and methyltrimethoxysilane. Then alcohol solutions of ruthenium chloride or carbon black were added. Films of filler concentration up to 60 vol.% were prepared by dip coating and then dried and heat-treated at various temperatures up to 600_°C. The D.C. resistance of the films can be varied within the range of 109 to 10−2 Ω ⋅ cm. A non-linear dependence on filler composition in the films was observed for both systems, which is explained by a modified percolation theory. A percolation threshold of 5.5 vol.% for SiO2-RuO2 or 50 vol.% for SiO2-C films, whereby the resistance drastically decreases, was determined. Moreover the temperature dependency of resistance and the current-voltage characteristics of the films can also be explained by this geometric model.
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页码：131 / 135
页数：4
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