Ge-on-Si Photonics for Mid-infrared Sensing Applications

被引：0
|
作者：
K. Gallacher
L. Baldassarre
A. Samarelli
R. W. Millar
A. Ballabio
J. Frigerio
G. Isella
A. Bashir
I. MacLaren
V. Giliberti
G. Pellegrini
P. Biagioni
M. Ortolani
D. J. Paul
机构：
[1] University of Glasgow,Center for Life NanoScience@Sapienza
[2] School of Engineering,L
[3] Sapienza Università di Roma and Istituto Italiano di Tecnologia,NESS, Dipartimento di Fisica del Politecnico di Milano
[4] Polo Territoriale di Como,University of Glasgow, School of Physics and Astronomy
[5] Kelvin Building,Dipartimento di Fisica
[6] University Avenue,undefined
[7] Politecnico di Milano,undefined
来源：
MRS Advances | 2016年 / 1卷 / 48期
关键词：
D O I：
10.1557/adv.2016.391
中图分类号：
学科分类号：
摘要：
There is significant interest to develop cheap CMOS compatible sensors that operate in the mid-infrared (MIR). To meet these requirements, Ge-on-Si is proving to be an exciting platform. There is the potential to realize waveguide integrated quantum well infrared photodetectors (QWIPs) based on Ge quantum wells (QWs). Intersubband absorption from p-Ge QWs has been demonstrated in the important atmospheric transmission window of 8-13 µm. An alternative strategy for sensing in the MIR is demonstrated through highly n-type doped Ge plasmonic antennas. These antennas demonstrate vibrational sensing of polydimethylsiloxane (PDMS) spin coated layers at 12.5 µm wavelength. These demonstrate enhanced sensing capabilities due to the localized hot spots of the antenna resonant modes.
引用
收藏
页码：3269 / 3279
页数：10
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