Activation of nitrogen implants in 6H-SiC

被引：0
作者：
J. N. Pan
J. A. Cooper
M. R. Melloch
机构：
[1] Purdue University,School of Electrical and Computer Engineering
来源：
Journal of Electronic Materials | 1997年 / 26卷
关键词：
Electrical activation; Ion implantation; Silicon carbide;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
We have studied the effect of anneal time and temperature on activation of high-dose nitrogen implants into 6H-SiC. At a fixed anneal temperature, a strong dependence on anneal time is seen. For short anneals, the resistivity initially decreases with anneal time. After a minimum resistivity is reached, resistivity increases with further anneal. The optimum anneal time for minimum resistiv-ity increases as anneal temperature is reduced. Successful activation has been achieved at temperatures as low as 900°C.
引用
收藏
页码：208 / 211
页数：3
相关论文
共 111 条
  • [1] Neudeck P.G.(1995)undefined J. Electron. Mater. 24 283-283
  • [2] Brown D.M.(1993)undefined IEEE Trans. Elec. Dev. 40 325-325
  • [3] Downey E.T.(1994)undefined IEEE Elec. Dev. Lett. 15 455-455
  • [4] Ghezzo M.(1994)undefined IEEE Elec. Dev. Lett. 15 212-212
  • [5] Kretchmer J.W.(1994)undefined IEEE Electron. Dev. Lett. 15 406-406
  • [6] Saia R.J.(1994)undefined IEEE Electron. Dev. Lett. 15 458-458
  • [7] Liu Y.S.(1996)undefined IEEE Electron. Dev. Lett. 17 4-4
  • [8] Edmond J.A.(1994)undefined Appl. Phys. Lett. 65 1659-1659
  • [9] Gati G.(1995)undefined J. Electron. Mater. 24 289-289
  • [10] Pinbley J.M.(1995)undefined J. Appl. Phys. 77 2479-2479
12345678910