Resistive random access memory (RRAM) technology: From material, device, selector, 3D integration to bottom-up fabrication

被引：0
作者：
Hong-Yu Chen
Stefano Brivio
Che-Chia Chang
Jacopo Frascaroli
Tuo-Hung Hou
Boris Hudec
Ming Liu
Hangbing Lv
Gabriel Molas
Joon Sohn
Sabina Spiga
V. Mani Teja
Elisa Vianello
H.-S. Philip Wong
机构：
[1] Stanford University,Department of Electrical Engineering and Stanford SystemX Alliance
[2] GigaDevice Semiconductor Inc.,Department of Electronics Engineering and Institute of Electronics
[3] Laboratorio MDM,Key Laboratory of Microelectronics Devices and Integrated Technology
[4] IMM-CNR,undefined
[5] National Chiao Tung University,undefined
[6] Institute of Microelectronics,undefined
[7] Chinese Academy of Science,undefined
[8] CEA Leti,undefined
来源：
Journal of Electroceramics | 2017年 / 39卷
关键词：
Resistive random access memory (RRAM); Resistive switching device; 3D integration; Selector; Bottom-up fabrication;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Emerging non-volatile memory technologies are promising due to their anticipated capacity benefits, non-volatility, and zero idle energy. One of the most promising candidates is resistive random access memory (RRAM) based on resistive switching (RS). This paper reviews the development of RS device technology including the fundamental physics, material engineering, three-dimension (3D) integration, and bottom-up fabrication. The device operation, physical mechanisms for resistive switching, reliability metrics, and memory cell selector candidates are summarized from the recent advancement in both industry and academia. Options for 3D memory array architectures are presented for the mass storage application. Finally, the potential application of bottom-up fabrication approaches for effective manufacturing is introduced.
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页码：21 / 38
页数：17
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