On metal-insulator electronic phase transitions in semiconductors

Some aspects of the problem of metal-insulator electronic phase transitions in semiconductors, which were not adequately studied previously, are examined in this paper. The issues considered are the effect of the hybridization between the resonance quasi-bound impurity states and the band continuum states on the transition, the effect of the uniform pressure on the nature of the transition, specific features of the metal-insulator transormation in the system of hydrogen-like impurities in the intermediate doping region in lightly doped narrow-gap and wide-gap semiconductors, and Anderson localization in heavily doped semiconductors. Minimum metallic conductivities under the conditions of Mott and Anderson transitions in p-CdSnAs2:Cu are determined. Phase diagrams are discussed.