ABC-model for interpretation of internal quantum efficiency and its droop in III-nitride LEDs: a review

被引:0
作者
Sergey Karpov
机构
[1] STR Group – Soft-Impact,
[2] Ltd.,undefined
来源
Optical and Quantum Electronics | 2015年 / 47卷
关键词
III-Nitrides; Light-emitting diodes; Recombination ; Efficiency droop; ABC-model;
D O I
暂无
中图分类号
学科分类号
摘要
The paper reviews applications of ABC-model to interpret internal quantum efficiency and its droop in III-nitride light-emitting diodes. Advantages of the model, its intrinsic limitations, and tentative mechanisms responsible for deviation of the model predictions from available observations are discussed. New experimental information on recombination processes in the LED active regions coming in terms of the ABC-model is considered along with still open questions and tasks for further experimental and theoretical studies.
引用
收藏
页码:1293 / 1303
页数:10
相关论文
共 168 条
[11]  
Hsieh MH(2011)Investigation of the carrier distribution in InGaN-based multi-quantum-well structures Phys. Stat. Solidi C 8 2372-4056
[12]  
Chichibu SF(2013)Experimental determination of the dominant type of Auger recombination in InGaN quantum wells Appl. Phys. Express 6 112101-845
[13]  
Uedono A(2011)Temperature-dependence of the internal efficiency droop in GaN-based diodes Appl. Phys. Lett. 99 181127-280
[14]  
Onuma T(2013)Direct measurement of Auger electrons emitted from a semiconductor light-emitting diode under electrical injection: identification of the dominant mechanism for efficiency droop Phys. Rev. Lett. 110 177406-2344
[15]  
Haskell BA(2002)Dislocation effect on light emission efficiency in gallium nitride Appl. Phys. Lett. 81 4721-undefined
[16]  
Chakraborthy A(2010)Effect of localized states on internal quantum efficiency of III-nitride LEDs Phys. Stat. Solidi RRL 4 320-undefined
[17]  
Koyama T(2007)Origin of effi-ciency droop in GaN-based light-emitting diodes Appl. Phys. Lett. 91 183507-undefined
[18]  
Fini PT(2011)Indirect Auger recombination as a cause of efficiency droop in nitride light-emitting diodes Appl. Phys. Lett. 98 161107-undefined
[19]  
Keller S(2012)Effect of active QW population on optical charac-teristics of polar, semipolar and nonpolar III-nitride light emitters Semicond. Sci. Technol. 27 024012-undefined
[20]  
DenBaars SP(2012)Non-equilibrium quantum well populations and active region inhomogeneity in polar and nonpolar III-nitride light emitters J. Appl. Phys. 111 103113-undefined