Electrical Transport in Porous Structures of Si-Ge/c-Si Formed by the Electrochemical Deposition of Germanium in Porous Silicon

被引：0
作者：
D. L. Goroshko
I. M. Gavrilin
A. A. Dronov
O. A. Goroshko
L. S. Volkova
N. L. Grevtsov
E. B. Chubenko
V. P. Bondarenko
机构：
[1] Institute of Automation and Control Processes,
[2] Far Eastern Branch,undefined
[3] Russian Academy of Sciences,undefined
[4] National Research University “MIET”,undefined
[5] Institute of Nanotechnologies of Microelectronics,undefined
[6] Russian Academy of Sciences,undefined
[7] Belarusian State University of Informatics and Radioelectronics,undefined
来源：
Semiconductors | 2023年 / 57卷
关键词：
Si-Ge alloy; electrical conductivity; electrochemical deposition of germanium; porous silicon; mobility; carrier concentration;
D O I：
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中图分类号：
学科分类号：
摘要：
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页码：46 / 51
页数：5
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