Al + implanted vertical 4H-SiC p-i-n diodes: Experimental and simulated forward current-voltage characteristics

被引：1

作者：

Nipoti R. ^{[1
]}

Sozzi G. ^{[2
]}

Puzzanghera M. ^{[2
]}

Menozzi R. ^{[2
]}

机构：

[1] CNR-IMM of Bologna, via Gobetti 101, Bologna

[2] University of Parma, Dipartimento di Ingegneria dell'Informazione, Parco Area della Scienza 181/A, Parma

来源：

MRS Advances | 2016年 / 1卷 / 54期

关键词：

annealing; electronic material; simulation;

D O I：

10.1557/adv.2016.315

中图分类号：

学科分类号：

摘要：

The temperature dependence of the forward and reverse current voltage characteristics of circular Al + implanted 4H-SiC p-i-n vertical diodes of various diameters, post implantation annealed at 1950 °C/5 min, have been used to obtain the thermal activation energies of the defects responsible of the generation and the recombination currents, as well as the area and the periphery current component of the current voltage characteristics. The former have values compatible with those of the traps associated to the carbon vacancy defect in 4H-SiC. The hypothesis that only these traps may justify the trend of the current voltage characteristics of the studied diodes has been tested by simulations in a Synopsys Sentaurus TCAD suite. © Materials Research Society 2016.

引用

页码：3637 / 3642

页数：5

共 21 条

[1] Analysis of different forward current-voltage behaviours of Al implanted 4H-SiC vertical p-i-n diodes [J].

Megherbi, M. L. ;

Pezzimenti, F. ;

Dehimi, L. ;

Rao, S. ;

Della Corte, F. G. .

SOLID-STATE ELECTRONICS, 2015, 109 :12-16

[2] Analysis of Trapping Effects on the Forward Current-Voltage Characteristics of Al-Implanted 4H-SiC p-i-n Diodes [J].

Megherbi, M. Larbi ;

Pezzimenti, Fortunato ;

Dehimi, Lakhdar ;

Saadoune, M. Achour ;

Della Corte, Francesco G. .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 65 (08) :3371-3378

[3] Influence of Lateral Spreading of Implanted Aluminum Ions and Implantation-Induced Defects on Forward Current-Voltage Characteristics of 4H-SiC Junction Barrier Schottky Diodes [J].

Mochizuki, Kazuhiro ;

Kameshiro, Norifumi ;

Onose, Hidekatsu ;

Yokoyama, Natsuki .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2009, 56 (05) :992-997

[4] Analysis of the Forward I-V Characteristics of Al-Implanted 4H-SiC p-i-n Diodes with Modeling of Recombination and Trapping Effects Due to Intrinsic and Doping-Induced Defect States [J].

Megherbi, M. L. ;

Pezzimenti, F. ;

Dehimi, L. ;

Saadoune, A. ;

Della Corte, F. G. .

JOURNAL OF ELECTRONIC MATERIALS, 2018, 47 (02) :1414-1420

[5] Temperature Dependence of Shockley Stacking Fault Expansion and Contraction in 4H-SiC p-i-n Diodes [J].

Caldwell, Joshua D. ;

Stahlbush, Robert E. ;

Glembocki, Orest J. ;

Hobart, Karl D. ;

Liu, Kendrick X. ;

Tadjer, Marko J. .

SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2, 2009, 600-603 :273-+

[6] Al+ implanted 4H-SiC p+-i-n diodes: Evidence for post-implantation-annealing dependent defect activation [J].

Grossner, U. ;

Moscatelli, F. ;

Nipoti, R. .

SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, 2014, 778-780 :657-+

[7] Inhomogeneous barrier height effect on the current-voltage characteristics of a W/4H-Sic Schottky diode [J].

Zeghdar, Kamal ;

Dehimi, Lakhdar .

2017 5TH INTERNATIONAL CONFERENCE ON ELECTRICAL ENGINEERING - BOUMERDES (ICEE-B), 2017,

[8] Research on high-voltage 4H-SiC P-i-N diode with planar edge junction termination techniques [J].

Zhang Fa-Sheng ;

Li Xin-Ran .

CHINESE PHYSICS B, 2011, 20 (06)

[9] Research on high-voltage 4H-SiC P-i-N diode with planar edge junction termination techniques [J].

张发生 ;

李欣然 .

Chinese Physics B, 2011, 20 (06) :370-375

[10] J-v characteristics of Al+ ion implanted p+/n 4H-SiC diodes annealed in silane ambient at 1600°C [J].

Bergamini, A ;

Rao, SP ;

Saddow, SE ;

Nipoti, R .

SILICON CARBIDE AND RELATED MATERIALS 2004, 2005, 483 :629-632

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