Phase effects in a semiconductor laser with diffraction extraction of radiation

被引：0
作者：
M. A. Kaliteevskii
E. L. Portnoi
G. S. Sokolovskii
机构：
[1] Russian Academy of Sciences,A. F. Ioffe Physicotechnical Institute
来源：
Technical Physics Letters | 1997年 / 23卷
关键词：
Radiation; Semiconductor Laser; Bragg Reflector; Distribute Bragg Reflector; Phase Effect;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Phase effects arising in a semiconductor laser with diffraction extraction of radiation and a distributed Bragg reflector on the substrate side are taken into account exactly quantitatively and the possibilities of using these effects in lasers is analyzed. It is shown that the phase effects studied can be used to increase the laser efficiency substantially.
引用
收藏
页码：699 / 700
页数：1
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