Self-assembled nanowires on semiconductor surfaces

被引:0
|
作者
J. H. G. Owen
K. Miki
D. R. Bowler
机构
[1] NIMS,International Centre for Young Scientists and Nanomaterials Laboratory
[2] University College London,Department of Physics & Astronomy
[3] University College London,London Centre for Nanotechnology
来源
Journal of Materials Science | 2006年 / 41卷
关键词
Scan Tunnelling Microscopy; Scan Tunnelling Microscopy Image; Step Edge; Electron Localisation Function; Scan Tunnelling Microscopy Measurement;
D O I
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中图分类号
学科分类号
摘要
A number of different families of nanowires which self-assemble on semiconductor surfaces have been identified in recent years. They are particularly interesting from the standpoint of nanoelectronics, which seeks non-lithographic ways of creating interconnects at the nm scale (though possibly for carrying signal rather than current), as well as from the standpoint of traditional materials science and surface science. We survey these families and consider their physical and electronic structure, as well as their formation and reactivity. Particular attention is paid to rare earth nanowires and the Bi nanoline, both of which self-assemble on Si(001).
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页码:4568 / 4603
页数:35
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