Special features of the electron-electron interaction in the potential of a heavily doped AlxGa1−xAs:Si/GaAs heterojunction

被引：0

作者：

V. I. Kadushkin

机构：

[1] Esenin State Pedagogical University,

来源：

Semiconductors | 2005年 / 39卷

关键词：

Relaxation Time; Magnetic Material; Electromagnetism; Temperature Shift; Intersubband Relaxation;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

A temperature shift of the poles in the Dingle plots was observed at temperatures ranging from 1.65 to 10.9 K. This shift indicates that the mechanisms of intrasubband and intersubband relaxation are transformed, which is directly confirmed by the temperature dependences of corresponding relaxation times.

引用

页码：226 / 230

页数：4