Atomic force microscopy of InAs quantum dots on the vicinal surface of a GaAs crystal

被引:0
作者
V. P. Evtikhiev
O. V. Konstantinov
E. Yu. Kotel’nikov
A. V. Matveentsev
A. N. Titkov
A. S. Shkol’nik
机构
[1] Russian Academy of Sciences,Ioffe Physicotechnical Institute
来源
Technical Physics Letters | 2002年 / 28卷
关键词
Microscopy; GaAs; Atomic Force Microscopy; Energy Level; Cluster Model;
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中图分类号
学科分类号
摘要
An approach to the processing of images obtained by atomic force microscopy is proposed. An example of determining the parameters of InAs clusters formed on the vicinal surface of a GaAs crystal is presented. Using the proposed technique within the framework of the previously developed spherical cluster model, it is possible to determine the energy levels of electrons and holes in InAs quantum dots.
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页码:139 / 141
页数:2
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