Oxide-based RRAM materials for neuromorphic computing

被引：0

作者：

XiaoLiang Hong

Desmond JiaJun Loy

Putu Andhita Dananjaya

Funan Tan

CheeMang Ng

WenSiang Lew

机构：

[1] Nanyang Technological University,Division of Physics and Applied Physics, School of Physical and Mathematical Sciences

[2] Nanyang Technological University,School of Electrical and Electronic Engineering

来源：

Journal of Materials Science | 2018年 / 53卷

关键词：

Resistive Random Access Memory (RRAM); Oxide-based RRAM; Neuromorphic Computation; RRAM Devices; Synaptic Devices;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

In this review, a comprehensive survey of different oxide-based resistive random-access memories (RRAMs) for neuromorphic computing is provided. We begin with the history of RRAM development, physical mechanism of conduction, fundamental of neuromorphic computing, followed by a review of a variety of RRAM oxide materials (PCMO, HfOx, TaOx, TiOx, NiOx, etc.) with a focus on their application for neuromorphic computing. Our goal is to give a broad review of oxide-based RRAM materials that can be adapted to neuromorphic computing and to help further ongoing research in the field.

引用

页码：8720 / 8746

页数：26

共 50 条

[41] Graphene oxide-based bioinspired neuromorphic transistors with artificial synaptic plasticity
Meng, Xinru
Qin, Gexun
Sun, Yanmei
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2025, 186
[42] PHYSICAL MODEL OF ELECTROFORMING MECHANISM IN OXIDE-BASED RESISTIVE SWITCHING DEVICES (RRAM)
Sun, Pengxiao
Li, Ling
Lu, Nianduan
Lv, Hangbing
Liu, Su
Liu, Ming
2014 12TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT), 2014,
[43] Physical Mechanism of Resistive Switching and Optimization Design of Cell in Oxide-based RRAM
Kang, Jinfeng
Gao, Bin
Chen, Bing
Huang, Peng
Zhang, Feifei
Liu, Lifeng
Liu, Xiaoyan
2012 IEEE 11TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT-2012), 2012, : 220 - 223
[44] Oxide-Based RRAM: Unified Microscopic Principle for both Unipolar and Bipolar Switching
Gao, B.
Kang, J. F.
Chen, Y. S.
Zhang, F. F.
Chen, B.
Huang, P.
Liu, L. F.
Liu, X. Y.
Wang, Y. Y.
Tran, X. A.
Wang, Z. R.
Yu, H. Y.
Chin, Albert
2011 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), 2011,
[45] Enhancement of Resistive and Synaptic Characteristics in Tantalum Oxide-Based RRAM by Nitrogen Doping
Kim, Doohyung
Kim, Jihyung
Kim, Sungjun
NANOMATERIALS, 2022, 12 (19)
[46] Charge Transition of Oxygen Vacancies during Resistive Switching in Oxide-Based RRAM
Lee, Jihang
Schell, William
Zhu, Xiaojian
Kioupakis, Emmanouil
Lu, Wei D.
ACS APPLIED MATERIALS & INTERFACES, 2019, 11 (12) : 11579 - 11586
[47] Ferroelectric materials for neuromorphic computing
Oh, S.
Hwang, H.
Yoo, I. K.
APL MATERIALS, 2019, 7 (09)
[48] Analytical Modeling of Current Overshoot in Oxide-Based Resistive Switching Memory (RRAM)
Ambrogio, Stefano
Milo, Valerio
Wang, ZhongQiang
Balatti, Simone
Ielmini, Daniele
IEEE ELECTRON DEVICE LETTERS, 2016, 37 (10) : 1268 - 1271
[49] HR3AM: A Heat Resilient Design for RRAM-based Neuromorphic Computing
Liu, Xiao
Zhou, Mingxuan
Rosing, Tajana S.
Zhao, Jishen
2019 IEEE/ACM INTERNATIONAL SYMPOSIUM ON LOW POWER ELECTRONICS AND DESIGN (ISLPED), 2019,
[50] 2D RRAM and Verilog-A model for Neuromorphic Computing
Huang, Yifu
Wu, Xiaohan
Gu, Yuqian
Ge, Ruijing
Zhang, Jiahan
Chang, Yao-Feng
Akinwande, Deji
Lee, Jack C.
2021 IEEE 16TH NANOTECHNOLOGY MATERIALS AND DEVICES CONFERENCE (NMDC 2021), 2021,

← 1 2 3 4 5 →