Control of Microwave Dielectric Properties in the System BaO ⋅ Nd2O3 ⋅ 4TiO2—BaO ⋅ Al2O3 ⋅ 4TiO2

BaO ⋅ Nd2O3 ⋅ 4TiO2—based ceramics were prepared by the mixed oxide route. Specimens were sintered at temperatures in the range 1200–1450∘C. Microstructures were investigated by scanning electron microscopy (SEM) and transmission electron microscopy (TEM); microwave dielectric properties were determined at 3 GHz by the Hakki and Coleman method. Product densities were at least 95% theoretical. The addition of up to 1 wt% Al2O3 to the starting mixtures reduced the sintering temperatures by at least 100∘C. Incorporation of small levels of Al into the structure (initially Ti sites) led to an increase in Q × f values, from 6200 to 7000 GHz, a decrease in relative permittivity (εr) from 88 to 78, and moved the temperature coefficient of resonant frequency (τf) towards zero. The addition of 0.5 wt% Al2O3 with 8 wt% Bi2O3 improved densification, increased both εr (to 88) and Q× f (to 8000 GHz) and moved τf closer to zero.