Electronic Coupling in Nanoscale InAs/GaAs Quantum Dot Pairs Separated by a Thin Ga(Al)As Spacer

被引：1
作者：
Yao Liu
Baolai Liang
Qinglin Guo
Shufang Wang
Guangsheng Fu
Nian Fu
Zhiming M Wang
Yuriy I Mazur
Gregory J Salamo
机构：
[1] Hebei University,College of Physics Science & Technology
[2] Hebei University of Technology,School of Material Science and Engineering
[3] University of Electronic Science and Technology of China,Institute of Fundamental and Frontier Sciences
[4] University of Arkansas,Institute for Nanoscience and Engineering
来源：
Nanoscale Research Letters | 2015年 / 10卷
关键词：
Quantum dots; Carrier tunneling; Photoluminescence; Carrier lifetime;
D O I：
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中图分类号：
学科分类号：
摘要：
The electronic coupling in vertically aligned InAs/GaAs quantum dot (QD) pairs is investigated by photoluminescence (PL) measurements. A thin Al0.5Ga0.5As barrier greatly changes the energy transfer process and the optical performance of the QD pairs. As a result, the QD PL intensity ratio shows different dependence on the intensity and wavelength of the excitation laser. Time-resolved PL measurements give a carrier tunneling time of 380 ps from the seed layer QDs to the top layer QDs while it elongates to 780 ps after inserting the thin Al0.5Ga0.5As barrier. These results provide useful information for fabrication and investigation of artificial QD molecules for implementing quantum computation applications.
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