Study of non-diffracting light beams from broad-stripe edge-emitting semiconductor lasers

被引：0
|
作者：
G. S. Sokolovskii
V. V. Dudelev
S. N. Losev
A. G. Deryagin
D. A. Vinokurov
A. V. Lyutetskiĭ
N. A. Pikhtin
S. O. Slipchenko
I. S. Tarasov
S. A. Zolotovskaya
E. U. Rafailov
V. I. Kuchinskii
W. Sibbett
机构：
[1] Russian Academy of Sciences,Ioffe Physical
[2] University of Dundee,Technical Institute
[3] University of St. Andrews,Carnegie Laboratory of Physics, Division of Electronic Engineering and Physics
来源：
Technical Physics Letters | 2010年 / 36卷
关键词：
Technical Physic Letter; Semiconductor Laser; Distribute Bragg Reflector; Bessel Beam; Spatial Homogeneity;
D O I：
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学科分类号：
摘要：
Broad-stripe edge-emitting semiconductor lasers have been used to obtain propagation-invariant (nondiffracting) light beams with powers and diameters of the central ray acceptable for optical manipulation and tweezing. The results of investigations of the propagation of Bessel beams generated from broad-stripe lasers with spectrally selective resonator show that the spatial homogeneity of emission plays a much greater role than the temporal coherence in the formation of Bessel beams. The main factors limiting the length of non-diffracting beam propagation (without distortion of the central ray) are the astigmatism and multimode character of laser radiation.
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页码：9 / 12
页数：3
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