Chemical vapor deposition growth and transport properties of MoS2–2H thin layers using molybdenum and sulfur as precursors

This paper introduces a feasible process to achieve the molybdenum disulfide atomic layers using chemical vapor deposition (CVD) method, with molybdenum thin film and solid sulfur as precursors. And some improvements were made to reduce the amount of metastable MoS2–3R. The morphology of the acquired MoS2 layers, existing as triangular flakes or large-area continuous films, can be controlled by adjusting the synthesis time and reacting temperature. The characterization results show that the monolayer MoS2 flakes reveal a (002)-oriented growth on SiO2/Si substrates, and its crystalline domain size is approximately 30 μm, and the thickness is 0.65 nm. Since the synthesis of MoS2–3R is restrained, the electronic transport properties of MoS2 with different layers were investigated, revealing that those properties equal with those of MoS2 samples prepared by exfoliation methods.