Studies of structural, dielectric and electrical properties of Bi4Ti2.9Sn0.1O12 electronic ceramic

In this paper, we have mainly reported the preliminary structural analysis and the frequency–temperature dependence of the dielectric and electrical properties of ceramic technology-fabricated Sn-modified bismuth titanate with a chemical composition of Bi4Ti2.9Sn0.1O12 electro-ceramic at room temperature. The compound is synthesized in a single-phase orthorhombic structure, as shown by the analysis of the X-ray diffraction pattern and data at room temperature. Detailed studies of dielectric and electrical properties in a wide temperature range (25 to 400°C) at different frequencies ranging from 1 to 1000 kHz have provided many important properties of the prepared sample. The dielectric constant and tangent loss at temperature 400°C and frequency 1 kHz are found to be 3 × 103 and 1.6, respectively. It was possible to calculate the contributions of the grains and grain boundaries to the overall resistance and capacitance of the synthesized material using Nyquist plots. The types of conduction mechanisms have been studied from an ac-conductivity study of the material. The J–E characteristics of the prepared sample which have slopes closer to 1, support the Ohmic behaviour. The study of the electric field and frequency dependence of electric polarization through hysteresis loops has confirmed the ferroelectric behaviour of the studied material at room temperature. Some experimental data obtained here suggest that the material may be useful as an electronic component in electronic industries.