Inelastic scattering of hot electrons by neutral donors in heavily silicon-doped GaAs/AlAs quantum wells

被引：0
作者：
I. A. Akimov
V. F. Sapega
D. N. Mirlin
B. P. Zakharchenya
V. M. Ustinov
A. E. Zhukov
A. Yu. Egorov
A. A. Sirenko
机构：
[1] Russian Academy of Sciences,A. F. Ioffe Physicotechnical Institute
[2] Pennsylvania State University,Department of Physics
来源：
Semiconductors | 1999年 / 33卷
关键词：
Silicon; Recombination; Magnetic Material; Electromagnetism; Inelastic Scattering;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The energy and momentum relaxation of hot electrons in n-type GaAs/AlAs quantum wells is studied. Hot photoluminescence due to the recombination of hot electrons with holes bound on Si acceptors is observed in structures with a high level of doping with silicon. Using the method of magnetic depolarization of hot photoluminescence, the probability of scattering of hot electrons is found to decrease substantially with increasing temperature in the range 4–80 K. This effect is shown to be due to the ionization of donors. It is established that the probability of inelastic scattering by neutral donors is several times greater than the probability of quasielastic electron-electron scattering.
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页码：1124 / 1127
页数：3
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