Mott transition in the asymmetric hubbard model at half-filling: Equation of motion approach

被引:0
|
作者
Anh-Tuan Hoang
Thi-Thu-Trang Tran
Duc-Anh Le
机构
[1] Vietnam Academy of Science and Technology,Institute of Physics
[2] Ha Long University,Faculty of Physics
[3] Hanoi National University of Education,undefined
来源
关键词
Metal-insulator transition; Asymmetric Hubbard model; Equation of motion approach;
D O I
暂无
中图分类号
学科分类号
摘要
We investigate the Mott metal-insulator transition in the asymmetric Hubbard model, which may describe the ground states of fermionic atoms trapped in optical lattices. We use the dynamical mean-field theory and the equation of motion approach to calculate the density of states at the Fermi level and the double occupation for various values of the on-site interaction U and the hopping asymmetry r. The critical interaction is also obtained as a function of the hopping asymmetry. Our results are in good agreement with the ones obtained by using the dynamical mean field theory with the exact diagonalization and the quantum Monte Carlo techniques.
引用
收藏
页码:238 / 242
页数:4
相关论文
共 50 条
  • [41] Variational Monte Carlo approach for the Hubbard model applied to twisted bilayer WSe2 at half-filling
    Biborski, A.
    Wojcik, P.
    Zegrodnik, M.
    PHYSICAL REVIEW B, 2024, 109 (12)
  • [42] Kondo lattice model at half-filling
    Nourafkan, R.
    Nafari, N.
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2008, 20 (25)
  • [43] Anisotropic pseudogap in the half-filling two-dimensional Hubbard model at finite temperature
    Saikawa, T
    Ferraz, A
    INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 2000, 14 (21): : 2271 - 2286
  • [44] SUPERCONDUCTING CORRELATION OF 2-DIMENSIONAL HUBBARD-MODEL NEAR HALF-FILLING
    IMADA, M
    JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1991, 60 (08) : 2740 - 2747
  • [45] DOPING DEPENDENCE OF THE SUSCEPTIBILITY IN THE 2-DIMENSIONAL HUBBARD-MODEL CLOSE TO HALF-FILLING
    KOPP, T
    MILA, F
    PHYSICAL REVIEW B, 1994, 50 (17): : 13017 - 13019
  • [46] Anomalous Fermi liquid effects in two-dimensional Hubbard model near half-filling
    Fuseya, Y
    Maebashi, H
    Yotsuhashi, S
    Miyake, K
    JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 2000, 69 (07) : 2158 - 2163
  • [47] Excitations in the charge ordered state of one-dimensional extended Hubbard model at half-filling
    Yoshioka, H
    Hashizume, Y
    SYNTHETIC METALS, 2003, 135 (1-3) : 551 - 552
  • [48] SYSTEMATIC 1/S STUDY OF THE 2-DIMENSIONAL HUBBARD-MODEL AT HALF-FILLING
    CHUBUKOV, AV
    MUSAELIAN, KA
    PHYSICAL REVIEW B, 1994, 50 (09) : 6238 - 6245
  • [49] On the Hubbard model at half filling
    Djajaputra, D
    Ruvalds, J
    SOLID STATE COMMUNICATIONS, 1998, 108 (12) : 899 - 901
  • [50] Quantum metal-insulator transition at half-filling
    Lin, HQ
    Wu, CQ
    SYNTHETIC METALS, 2001, 119 (1-3) : 231 - 232