Mott transition in the asymmetric hubbard model at half-filling: Equation of motion approach

被引：0
|
作者：
Anh-Tuan Hoang
Thi-Thu-Trang Tran
Duc-Anh Le
机构：
[1] Vietnam Academy of Science and Technology,Institute of Physics
[2] Ha Long University,Faculty of Physics
[3] Hanoi National University of Education,undefined
来源：
Journal of the Korean Physical Society | 2016年 / 68卷
关键词：
Metal-insulator transition; Asymmetric Hubbard model; Equation of motion approach;
D O I：
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中图分类号：
学科分类号：
摘要：
We investigate the Mott metal-insulator transition in the asymmetric Hubbard model, which may describe the ground states of fermionic atoms trapped in optical lattices. We use the dynamical mean-field theory and the equation of motion approach to calculate the density of states at the Fermi level and the double occupation for various values of the on-site interaction U and the hopping asymmetry r. The critical interaction is also obtained as a function of the hopping asymmetry. Our results are in good agreement with the ones obtained by using the dynamical mean field theory with the exact diagonalization and the quantum Monte Carlo techniques.
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页码：238 / 242
页数：4
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