p-type ZnO films for preparation of p-n-junctions

被引：0
|
作者：
N. R. Aghamalyan
R. K. Hovsepyan
S. I. Petrosyan
机构：
[1] NAS of Armenia,Institute for Physical Research
来源：
Journal of Contemporary Physics (Armenian Academy of Sciences) | 2008年 / 43卷
关键词：
ZnO:Li films; -; -junctions; conductivity; photoelectrical properties; 73.40.Vz;
D O I：
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中图分类号：
学科分类号：
摘要：
Photoelectrical properties of ZnO films doped with Li acceptor impurity and prepared by the electron-beam evaporation method were investigated. The obtained films possess a p-type conductivity. Using p-ZnO:Li and n-ZnO:Ga films, the p-n-junctions were prepared and their photoelectrical properties were studied. The mechanism of charge carrier transport in these films and the influence of annealing on the type and mechanism of conductivity were investigated.
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页码：177 / 182
页数：5
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