Emission Properties of Porous Silicon Electron Emitters Formed by Pulsed Anodic Etching

被引：0
|
作者：
W. B. Hu
W. Zhao
J. L. Fan
S. L. Wu
J. T. Zhang
机构：
[1] Xi’an Jiaotong University,Key Laboratory for Physical Electronics and Devices of the Ministry of Education
来源：
Journal of Electronic Materials | 2017年 / 46卷
关键词：
Porous silicon; pulsed anodic etching; electrochemical oxidation; electron emitter;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Porous silicon (PS) layers were formed by pulsed anodic etching and subsequently processed by electrochemical oxidization (ECO) and high-pressure water vapor annealing (HWA), and their morphologies and oxidation degrees were analyzed. The electron emitters based on these PS layers were fabricated, and their emission properties were investigated. The experimental results show that a PS layer formed by pulsed anodic etching has a better pore-diameter homogeneity in the longitudinal direction, and it can obtain good oxidation quality more easily by the combined treatment of ECO and HWA. The as-formed PS electron emitters have better emission properties in comparison with those based on PS layers prepared by constant-current anodic etching.
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页码：895 / 902
页数：7
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