Doping, compensation, and photosensitivity of detector grade CdTe

被引：0
|
作者：
V. Babentsov
J. Franc
A. Fauler
M. Fiederle
R.B. James
机构：
[1] Institute for Semiconductor Physics,Nonproliferation and National Security Directorate
[2] Charles University,undefined
[3] Faculty of Mathematics and Physics,undefined
[4] Institute of Physics,undefined
[5] Materialforschungszentrum,undefined
[6] Brookhaven National Laboratory,undefined
来源：
Journal of Materials Research | 2008年 / 23卷
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
We studied the resistivity, photosensitivity, photoluminescence, and surface photovoltage of CdTe crystals doped with Ge or Sn to extend our knowledge of the influence of the deep-donor level on compensation and afterglow effects. We demonstrated a strong correlation between photosensitivity caused by photoelectrons with Fermi-level variations near the GeCd0/2+ or SnCd0/2+ energy levels. Surface photovoltage measurements confirmed that when the concentration of residual acceptors varied along the direction of growth, then trapping conditions dramatically changed as a defect was converted from a neutral state to doubly charged positive one.
引用
收藏
页码：1751 / 1757
页数：6
相关论文
共 50 条
  • [31] In-Situ Antimony Doping of CdTe
    Khan, M.
    Evani, V.
    Palekis, V.
    Bane, P.
    Collins, S.
    Morel, D.
    Ferekides, C.
    2015 IEEE 42ND PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC), 2015,
  • [32] ION-ASSISTED DOPING OF CDTE
    FAHRENBRUCH, AL
    CHIEN, KF
    KIM, D
    LOPEZOTERO, A
    SHARPS, P
    BUBE, RH
    SOLAR CELLS, 1989, 27 (1-4): : 137 - 147
  • [33] Compensation detector of birefringence
    Shribak, MI
    Kolpashchikov, VL
    INTERNATIONAL SYMPOSIUM ON POLARIZATION ANALYSIS AND APPLICATIONS TO DEVICE TECHNOLOGY, 1996, 2873 : 316 - 319
  • [34] Compensation detector of birefringence
    Shribak, MI
    Kolpashchikov, VL
    POLARIMETRY AND ELLIPSOMETRY, 1997, 3094 : 118 - 120
  • [35] OXYGEN DOPING IN CDTE, CDS AND ZNS
    AKIMOTO, K
    OKUYAMA, H
    IKEDA, M
    MORI, Y
    JOURNAL OF CRYSTAL GROWTH, 1992, 117 (1-4) : 420 - 423
  • [36] Heavy metal doping of CdTe crystals
    Saucedo, E
    Fornaro, L
    Sochinskii, NV
    Cuña, A
    Corregidor, V
    Granados, D
    Diéquez, E
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2004, 51 (06) : 3105 - 3110
  • [37] p-type doping of CdTe
    Valdna, V
    SOLID STATE PHENOMENA, 1999, 67-8 : 309 - 314
  • [38] Phosphorus doping of polycrystalline CdTe by diffusion
    Colegrove, Eric
    Albin, David S.
    Guthrey, Harvey
    Harvey, Steve
    Burst, James
    Moutinho, Helio
    Farrell, Stuart
    Al-Jassim, Mowafak
    Metzger, Wyatt K.
    2015 IEEE 42ND PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC), 2015,
  • [39] Heavy metal doping of CdTe crystals
    Saucedo, E
    Fornaro, L
    Sochinskii, NV
    Cuña, A
    Corregidor, V
    Granados, D
    Diéguez, E
    2003 IEEE NUCLEAR SCIENCE SYMPOSIUM, CONFERENCE RECORD, VOLS 1-5, 2004, : 3422 - 3424
  • [40] Influence of boron doping on the photosensitivity of cubic silicon carbide
    Rodionov, V. N.
    Bratus', V. Ya.
    Voronov, S. O.
    SEMICONDUCTOR PHYSICS QUANTUM ELECTRONICS & OPTOELECTRONICS, 2019, 22 (01) : 92 - 97
12345