Doping, compensation, and photosensitivity of detector grade CdTe

被引：0
|
作者：
V. Babentsov
J. Franc
A. Fauler
M. Fiederle
R.B. James
机构：
[1] Institute for Semiconductor Physics,Nonproliferation and National Security Directorate
[2] Charles University,undefined
[3] Faculty of Mathematics and Physics,undefined
[4] Institute of Physics,undefined
[5] Materialforschungszentrum,undefined
[6] Brookhaven National Laboratory,undefined
来源：
Journal of Materials Research | 2008年 / 23卷
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摘要：
We studied the resistivity, photosensitivity, photoluminescence, and surface photovoltage of CdTe crystals doped with Ge or Sn to extend our knowledge of the influence of the deep-donor level on compensation and afterglow effects. We demonstrated a strong correlation between photosensitivity caused by photoelectrons with Fermi-level variations near the GeCd0/2+ or SnCd0/2+ energy levels. Surface photovoltage measurements confirmed that when the concentration of residual acceptors varied along the direction of growth, then trapping conditions dramatically changed as a defect was converted from a neutral state to doubly charged positive one.
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页码：1751 / 1757
页数：6
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