Quasielastic scattering of light by a photoexcited electron-hole plasma induced in a GaAs layer in the presence of InAs quantum dots

被引：0
|
作者：
B. Kh. Baîramov
V. A. Voįtenko
B. P. Zakharchenya
V. V. Toporov
M. Henini
A. J. Kent
机构：
[1] Russian Academy of Sciences,A. F. Ioffe Physicotechnical Institute
[2] University of Nottingham,Department of Physics
来源：
JETP Letters | 1998年 / 67卷
关键词：
71.35.Ee; 73.61.Ey; 78.35+c;
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学科分类号：
摘要：
The development of a method for registering quasielastic electronic light scattering spectra in the near-IR region, which makes it possible to detect light scattering by a photoexcited electron-hole plasma induced in a GaAs layer in the presence of a self-organized ensemble of InAs quantum dots, is reported. A substantial resonance intensification of such scattering, two orders of magnitude greater than the values established for the bulk material, is observed, and the main mechanism of such scattering is determined.
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