The dynamic organic p-n junction

被引:0
|
作者
Matyba, Piotr [1 ]
Maturova, Klara [2 ]
Kemerink, Martijn [2 ]
Robinson, Nathaniel D. [3 ]
Edman, Ludvig [1 ]
机构
[1] Umea Univ, Dept Phys, Organ Photon & Elect Grp, SE-90187 Umea, Sweden
[2] Eindhoven Univ Technol, Dept Appl Phys, NL-5600 MB Eindhoven, Netherlands
[3] Linkoping Univ, Dept Phys Chem & Biol, Transport & Separat Grp, SE-58183 Linkoping, Sweden
基金
瑞典研究理事会;
关键词
EMITTING ELECTROCHEMICAL-CELLS; ELECTROLUMINESCENT DEVICES; LIGHT; ELECTRONICS; EFFICIENCY;
D O I
10.1038/NMAT2478
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Static p-n junctions in inorganic semiconductors are exploited in a wide range of today's electronic appliances. Here, we demonstrate the in situ formation of a dynamic p-n junction structure within an organic semiconductor through electrochemistry. Specifically, we use scanning kelvin probe microscopy and optical probing on planar light-emitting electrochemical cells (LECs) with a mixture of a conjugated polymer and an electrolyte connecting two electrodes separated by 120 mu m. We find that a significant portion of the potential drop between the electrodes coincides with the location of a thin and distinct light-emission zone positioned >30 mu m away from the negative electrode. These results are relevant in the context of a long-standing scientific debate, as they prove that electrochemical doping can take place in LECs. Moreover, a study on the doping formation and dissipation kinetics provides interesting detail regarding the electronic structure and stability of the dynamic organic p-n junction, which may be useful in future dynamic p-n junction-based devices.
引用
收藏
页码:672 / 676
页数:5
相关论文
共 50 条
  • [41] RECOMBINATION RADIATION OF A P-N JUNCTION IN INAS
    ANISIMOV.ID
    YUNGERMA.VM
    KULYMANO.AV
    SOVIET PHYSICS SOLID STATE,USSR, 1965, 6 (08): : 2036 - &
  • [42] The semiconductor p-n junction "ultimate lamp"
    Holonyak, N
    MRS BULLETIN, 2005, 30 (07) : 515 - 517
  • [43] Terahertz Source with Graphene p-n Junction
    Liu, Jingping
    Ban, Dayan
    Safavi-Naeini, Safieddin
    Zhao, Huichang
    2015 40TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER AND TERAHERTZ WAVES (IRMMW-THZ), 2015,
  • [44] Monolayer graphene nanoribbon p-n junction
    Department of Electronic Engineering, Faculty of Electrical Engineering, Universiti Teknologi Malaysia, 81310 Skudai Johor DarulTakzim, Malaysia
    IEEE Reg. Symp. Micro Nanoelectronics, RSM - Programme Abstr., 2011, (253-255):
  • [45] P-N JUNCTION REVEALED BY ELECTROLYTIC ETCHING
    BILLIG, E
    DOWD, JJ
    NATURE, 1953, 172 (4368) : 115 - 115
  • [46] GAAS OSCILLATORS WITH P-N JUNCTION CONTACTS
    PROKHORO.ED
    SHALAEV, VA
    DEMYANOV.LA
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1969, 3 (03): : 365 - &
  • [47] THRESHOLD CURRENT FOR P-N JUNCTION LASERS
    MOLL, JL
    GIBBONS, JF
    IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1963, 7 (02) : 157 - 159
  • [48] THE TRANSIENT RESPONSE OF P-N JUNCTION RECTIFIERS
    GOSSICK, BR
    PHYSICAL REVIEW, 1954, 94 (05): : 1427 - 1427
  • [49] TOWARD THE THEORY OF DEGENERATE P-N JUNCTION
    IVANCHIK, II
    SOVIET PHYSICS-SOLID STATE, 1961, 3 (01): : 75 - 84
  • [50] P-N JUNCTION DETECTOR FOR GAS CHROMATOGRAPHY
    EDEN, C
    MARGONIN.Y
    JOURNAL OF GAS CHROMATOGRAPHY, 1968, 6 (06): : 349 - &