Photoresponse recovery in silicon photodiodes upon VUV irradiation

被引：0

作者：

V. V. Zabrodskiy

P. N. Aruev

V. P. Belik

B. Ya. Ber

D. Yu. Kazantsev

M. V. Drozdova

N. V. Zabrodskaya

M. S. Lazeeva

A. D. Nikolenko

V. L. Sukhanov

V. V. Filimonov

E. V. Sherstnev

机构：

[1] Russian Academy of Sciences,Ioffe Physical

[2] St. Petersburg State Polytechnic University,Technical Institute

[3] Russian Academy of Sciences,Budker Institute of Nuclear Physics, Siberian Branch

来源：

Semiconductors | 2013年 / 47卷

关键词：

Oxyni Tride; Vacuum Ultraviolet; Photo Diode; Silicon Compound; Spatial Homogeneity;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The spatial homogeneity of the photoresponse is studied for silicon photodiodes based on p-n and n-p junctions a year after their irradiation at a wavelength of 121.6 nm and those based on n-p junctions four years after their irradiation with soft X-rays. It is demonstrated that silicon photodiodes based on p-n junctions exhibit a photoresponse recovery effect on being irradiated at a wavelength of 121.6 nm. No recovery effect is observed for silicon photodiodes based on n-p structures.

引用

页码：213 / 216

页数：3

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