Leakage currents in 4H-SiC JBS diodes

被引：0
|
作者：
P. A. Ivanov
I. V. Grekhov
A. S. Potapov
O. I. Kon’kov
N. D. Il’inskaya
T. P. Samsonova
O. Korol’kov
N. Sleptsuk
机构：
[1] Russian Academy of Sciences,Ioffe Physical Technical Institute
[2] Tallinn University of Technology,Department of Electronics
来源：
Semiconductors | 2012年 / 46卷
关键词：
Leakage Current; Deep Level Transient Spectroscopy; Reverse Voltage; Space Charge Limited Current; Deep Level Transient Spectroscopy Spectrum;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Leakage currents in high-voltage 4H-SiC diodes, which have an integrated (p-n) Schottky structure (Junction Barrier Schottky, JBS), have been studied using commercial diodes and specially fabricated (based on a commercial epitaxial material) test Schottky diodes with and without the JBS structure. It is shown that (i) the main role in reverse charge transport is played by SiC crystal structure defects, most probably, by threading dislocations (density ∼104 cm−2), and (ii) the JBS structure, formed by the implantation of boron, partially suppresses the leakage currents (by up to a factor of 10 at optimal separation, 8 μm between local p-type regions).
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页码：397 / 400
页数：3
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