Highly accurate determination of heterogeneously stacked Van-der-Waals materials by optical microspectroscopy

被引:0
|
作者
Andreas Hutzler
Birk Fritsch
Christian D. Matthus
Michael P. M. Jank
Mathias Rommel
机构
[1] Friedrich-Alexander University Erlangen-Nürnberg,Electron Devices (LEB)
[2] Technische Universität Dresden,Circuit Design and Network Theory
[3] Fraunhofer Institute for Integrated Systems and Device Technology IISB,undefined
来源
Scientific Reports | / 10卷
关键词
D O I
暂无
中图分类号
学科分类号
摘要
The composition of Van-der-Waals heterostructures is conclusively determined using a hybrid evaluation scheme of data acquired by optical microspectroscopy. This scheme deploys a parameter set comprising both change in reflectance and wavelength shift of distinct extreme values in reflectance spectra. Furthermore, the method is supported by an accurate analytical model describing reflectance of multilayer systems acquired by optical microspectroscopy. This approach allows uniquely for discrimination of 2D materials like graphene and hexagonal boron nitride (hBN) and, thus, quantitative analysis of Van-der-Waals heterostructures containing structurally very similar materials. The physical model features a transfer-matrix method which allows for flexible, modular description of complex optical systems and may easily be extended to individual setups. It accounts for numerical apertures of applied objective lenses and a glass fiber which guides the light into the spectrometer by two individual weighting functions. The scheme is proven by highly accurate quantification of the number of layers of graphene and hBN in Van-der-Waals heterostructures. In this exemplary case, the fingerprint of graphene involves distinct deviations of reflectance accompanied by additional wavelength shifts of extreme values. In contrast to graphene, the fingerprint of hBN reveals a negligible deviation in absolute reflectance causing this material being only detectable by spectral shifts of extreme values.
引用
收藏
相关论文
共 50 条
  • [21] EMPIRICAL MODIFICATION OF VAN-DER-WAALS EQUATION
    RAO, AS
    VISWANAT.DS
    INDIAN JOURNAL OF TECHNOLOGY, 1971, 9 (12): : 476 - &
  • [22] VAN-DER-WAALS THEORY OF CURVED SURFACES
    BLOKHUIS, EM
    BEDEAUX, D
    MOLECULAR PHYSICS, 1993, 80 (04) : 705 - 720
  • [23] VIBRATIONAL AVERAGING IN VAN-DER-WAALS COMPLEXES
    NEMES, L
    ACTA CHIMICA HUNGARICA-MODELS IN CHEMISTRY, 1993, 130 (06): : 857 - 871
  • [24] STATISTICAL-THEORY OF VAN-DER-WAALS FORCES
    TULUB, AV
    BALMAKOV, MD
    DOKLADY AKADEMII NAUK SSSR, 1972, 205 (01): : 64 - &
  • [25] GENERALIZED VAN-DER-WAALS MODEL APPLIED TO TETRAMETHYLSILANE
    BAONZA, VG
    ALONSO, MC
    DELGADO, JN
    BERICHTE DER BUNSEN-GESELLSCHAFT-PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 1994, 98 (01): : 53 - 58
  • [26] Dynamics of optical vortices in van der Waals materials
    Kurman, Yaniv
    Dahan, Raphael
    Shenfux, Hanan Herzig
    Rosolen, Gilles
    Janzen, Eli
    Edgar, James H.
    Koppens, Frank H. L.
    Kaminer, Ido
    OPTICA, 2023, 10 (05): : 612 - 618
  • [27] VAN-DER-WAALS ATTRACTION FORCES AND LINE TENSION
    TOSHEV, BV
    AVRAMOV, MZ
    COLLOIDS AND SURFACES A-PHYSICOCHEMICAL AND ENGINEERING ASPECTS, 1995, 100 : 203 - 205
  • [28] VAN-DER-WAALS FORCES BETWEEN IMMERSED PARTICLES
    BARGEMAN, D
    VANVOORS.F
    JOURNAL OF ELECTROANALYTICAL CHEMISTRY, 1972, 37 (JUN): : 45 - &
  • [29] THERMODYNAMIC EQUIVALENCE OF VAN-DER-WAALS SPIN SYSTEMS
    VERTOGEN, G
    DEVRIES, AS
    PHYSICA, 1972, 59 (04): : 634 - &
  • [30] NEW APPLICATIONS OF VAN-DER-WAALS RADII IN CHEMISTRY
    ZEFIROV, YV
    ZORKY, PM
    USPEKHI KHIMII, 1995, 64 (05) : 446 - 461