Nickel silicide formation on Si(100) and Poly-Si with a presilicide N2+ implantation

被引：0

作者：

P. S. Lee

D. Mangelinck

K. L. Pey

J. Ding

D. Z. Chi

J. Y. Dai

A. See

机构：

[1] National University of Singapore,Department of Materials Science

[2] L2MP-CNRS,Faculté de saint Jérome

[3] National University of Singapore,case 151

[4] National University of Singapore,Department of Electrical and Computing Engineering

[5] Chartered Semiconductor Manufacturing Ltd.,Institute of Materials Research and Engineering

来源：

Journal of Electronic Materials | 2001年 / 30卷

关键词：

N; Implant; NiSi; agglomeration; phase stability; layer inversion;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The key feature of this study is to incorporate N2+ implant prior to Ni sputtering on the poly-Si gate and source/drain regions. The results show that the incorporation of the presilicide N2+ implant is able to suppress agglomeration in the Ni silicide films up to 900°C and enhance the phase stability of NiSi on Si(100) up to 750°C. Stable and low sheet resistance was achieved on the silicided undoped poly-Si up to 700°C due to reduced layer inversion, which is driven by grain boundary energy and the surface energy of the poly-Si.

引用

页码：1554 / 1559

页数：5

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