Nickel silicide formation on Si(100) and Poly-Si with a presilicide N2+ implantation

被引：0
|
作者：
P. S. Lee
D. Mangelinck
K. L. Pey
J. Ding
D. Z. Chi
J. Y. Dai
A. See
机构：
[1] National University of Singapore,Department of Materials Science
[2] L2MP-CNRS,Faculté de saint Jérome
[3] National University of Singapore,case 151
[4] National University of Singapore,Department of Electrical and Computing Engineering
[5] Chartered Semiconductor Manufacturing Ltd.,Institute of Materials Research and Engineering
来源：
Journal of Electronic Materials | 2001年 / 30卷
关键词：
N; Implant; NiSi; agglomeration; phase stability; layer inversion;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The key feature of this study is to incorporate N2+ implant prior to Ni sputtering on the poly-Si gate and source/drain regions. The results show that the incorporation of the presilicide N2+ implant is able to suppress agglomeration in the Ni silicide films up to 900°C and enhance the phase stability of NiSi on Si(100) up to 750°C. Stable and low sheet resistance was achieved on the silicided undoped poly-Si up to 700°C due to reduced layer inversion, which is driven by grain boundary energy and the surface energy of the poly-Si.
引用
收藏
页码：1554 / 1559
页数：5
相关论文
共 50 条
  • [31] FORMATION OF EPITAXIAL SI/COSI2/SI STRUCTURES BY CO IMPLANTATION INTO (100)-SI AND (111)-SI
    BULLELIEUWMA, CWT
    HAKKENS, FJG
    VANOMMEN, AH
    MICROSCOPY OF SEMICONDUCTING MATERIALS 1989, 1989, 100 : 635 - 640
  • [32] FORMATION OF EPITAXIAL SI/COSI2/SI STRUCTURES BY CO IMPLANTATION INTO (100)-SI AND (111)-SI
    BULLELIEUWMA, CWT
    HAKKENS, FJG
    VANOMMEN, AH
    INSTITUTE OF PHYSICS CONFERENCE SERIES, 1989, (100): : 635 - 640
  • [33] Formation of a ferromagnetic silicide at the Fe/Si(100) interface
    Klasges, R
    Carbone, C
    Eberhardt, W
    Pampuch, C
    Rader, O
    Kachel, T
    Gudat, W
    PHYSICAL REVIEW B, 1997, 56 (17) : 10801 - 10804
  • [34] Hafnium silicide formation on Si(100) upon annealing
    de Siervo, A.
    Fluechter, C. R.
    Weier, D.
    Schuermann, M.
    Dreiner, S.
    Westphal, C.
    Carazzolle, M. F.
    Pancotti, A.
    Landers, R.
    Kleiman, G. G.
    PHYSICAL REVIEW B, 2006, 74 (07)
  • [35] Effects of F+ implantation on the characteristics of poly-Si films and low-temperature n-ch poly-Si thin-film transistors
    Park, Jin Won
    Ahn, Byung Tae
    Lee, Kwyro
    Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers, 1995, 34 (03): : 1436 - 1441
  • [36] Ultrathin cobalt silicide film formation on Si(100)
    Hwang, IY
    Kim, JH
    Oh, SK
    Kang, HJ
    Lee, YS
    SURFACE AND INTERFACE ANALYSIS, 2003, 35 (02) : 184 - 187
  • [37] Comparison of lateral field emitter characteristics for titanium silicide, poly-Si, and single crystal Si tip
    Lim, MS
    Park, CM
    Han, MK
    Choi, YI
    MATERIALS ISSUES IN VACUUM MICROELECTRONICS, 1998, 509 : 179 - 185
  • [38] EFFECTS OF F+ IMPLANTATION ON THE CHARACTERISTICS OF POLY-SI FILMS AND LOW-TEMPERATURE N-CH POLY-SI THIN-FILM TRANSISTORS
    PARK, JW
    AHN, BT
    LEE, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (03): : 1436 - 1441
  • [39] In-situ studies of silicide formation in Ti-Ta bilayer thin films on poly-Si
    Özcan, AS
    Ludwig, KF
    MAGNETIC AND ELECTRONIC FILMS-MICROSTRUCTURE, TEXTURE AND APPLICATION TO DATA STORAGE, 2002, 721 : 43 - 48
  • [40] PDSI2/POLY-SI CONTACTS FOR SI DEVICES
    TSAUR, BY
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (08) : C325 - C325
12345