Nickel silicide formation on Si(100) and Poly-Si with a presilicide N2+ implantation

被引：0
|
作者：
P. S. Lee
D. Mangelinck
K. L. Pey
J. Ding
D. Z. Chi
J. Y. Dai
A. See
机构：
[1] National University of Singapore,Department of Materials Science
[2] L2MP-CNRS,Faculté de saint Jérome
[3] National University of Singapore,case 151
[4] National University of Singapore,Department of Electrical and Computing Engineering
[5] Chartered Semiconductor Manufacturing Ltd.,Institute of Materials Research and Engineering
来源：
Journal of Electronic Materials | 2001年 / 30卷
关键词：
N; Implant; NiSi; agglomeration; phase stability; layer inversion;
D O I：
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中图分类号：
学科分类号：
摘要：
The key feature of this study is to incorporate N2+ implant prior to Ni sputtering on the poly-Si gate and source/drain regions. The results show that the incorporation of the presilicide N2+ implant is able to suppress agglomeration in the Ni silicide films up to 900°C and enhance the phase stability of NiSi on Si(100) up to 750°C. Stable and low sheet resistance was achieved on the silicided undoped poly-Si up to 700°C due to reduced layer inversion, which is driven by grain boundary energy and the surface energy of the poly-Si.
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页码：1554 / 1559
页数：5
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