THz Photoconductive Antennas Made From Ion-Bombarded Semiconductors

被引：0
作者：
J. Mangeney
机构：
[1] Institut d’Electronique Fondamentale,
[2] CNRS - Univ. Paris-Sud 11,undefined
来源：
Journal of Infrared, Millimeter, and Terahertz Waves | 2012年 / 33卷
关键词：
Terahertz; Photoconductive antennas; Ion implantation; Ion irradiation; Telecommunication;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
We review the most important developments in the technology of THz photoconductive antennas made from ion-bombarded semiconductors. We describe the structural, optical and electrical properties of various ion-bombarded semiconductors and discuss the nature of the defects introduced by the ion bombardment technique and their impact on the characteristics of THz photoconductive antennas. Finally, we present the performances achieved by photoconductive antennas based on ion-bombarded semiconductors for optical excitation at various wavelength.
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页码：455 / 473
页数：18
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