Carrier localization in In-rich InGaN/GaN multiple quantum wells for green light-emitting diodes

被引：0
作者：
Hyun Jeong
Hyeon Jun Jeong
Hye Min Oh
Chang-Hee Hong
Eun-Kyung Suh
Gilles Lerondel
Mun Seok Jeong
机构：
[1] Center for Integrated Nanostructure Physics (CINAP),Laboratoire de Nanotechnologie et d'Instrumentation Optique, Institut Charles Delaunay, CNRS
[2] Institute for Basic Science (IBS),UMR 6281
[3] Sungkyunkwan University,Department of Energy Science
[4] Université de Technologie de Troyes,School of Semiconductor and Chemical Engineering
[5] Sungkyunkwan University,undefined
[6] Chonbuk National University,undefined
来源：
Scientific Reports | / 5卷
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摘要：
Carrier localization phenomena in indium-rich InGaN/GaN multiple quantum wells (MQWs) grown on sapphire and GaN substrates were investigated. Temperature-dependent photoluminescence (PL) spectroscopy, ultraviolet near-field scanning optical microscopy (NSOM) and confocal time-resolved PL (TRPL) spectroscopy were employed to verify the correlation between carrier localization and crystal quality. From the spatially resolved PL measurements, we observed that the distribution and shape of luminescent clusters, which were known as an outcome of the carrier localization, are strongly affected by the crystalline quality. Spectroscopic analysis of the NSOM signal shows that carrier localization of MQWs with low crystalline quality is different from that of MQWs with high crystalline quality. This interrelation between carrier localization and crystal quality is well supported by confocal TRPL results.
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