Growth of Bi12GeO20 and Bi12SiO20 crystals by the low-thermal gradient Czochralski technique

被引：0
作者：
V. N. Shlegel
D. S. Pantsurkin
机构：
[1] Russian Academy of Sciences,Nikolaev Institute of Inorganic Chemistry, Siberian Branch
来源：
Crystallography Reports | 2011年 / 56卷
关键词：
Interference Pattern; Crystallography Report; Crystallization Front; Optical Homogeneity; Vertex Region;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Bi12SiO20 crystals have been grown for the first time by the low-thermal gradient Czochralski technique in the 〈111〉 and 〈110〉 directions. The conditions for reproducible crystal growth with a high-quality polyhedral faceted front are found. The systematic features of shaping Bi12SiO20 and Bi12GeO20 crystals, grown by the low-thermal gradient Czochralski technique, are compared. The defect formation in these crystals is studied and their optical homogeneity is analyzed by interferometry.
引用
收藏
相关论文
共 40 条
[1]  
Ballman A. A.(1967)undefined J. Cryst. Growth 1 37-undefined
[2]  
Safonov A. I.(1968)undefined Kristallografiya 13 914-undefined
[3]  
Baryshev S. A.(1969)undefined Kristallografiya 14 152-undefined
[4]  
Nikiforova T. I.(1970)undefined Neorg. Mater. 6 284-undefined
[5]  
Safonov A. I.(1978)undefined Kristallografiya 23 174-undefined
[6]  
Baryshev S. A.(1969)undefined Kristallografiya 14 363-undefined
[7]  
Nikiforova T. I.(1974)undefined J. Cryst. Growth 24/25 429-undefined
[8]  
Safronov T. M.(1977)undefined J. Cryst. Growth 42 431-undefined
[9]  
Batog V. N.(1990)undefined J. Cryst. Growth 100 417-undefined
[10]  
Krasilov Yu. I.(2004)undefined J. Cryst. Growth 266 103-undefined
1234