One-pot synthesis of h-BN fullerenes usinsg a graphene oxide template

被引:0
作者
Sang Sub Kim
Tran Van Khai
Yong Jung Kwon
Akash Katoch
Ping Wu
Hyoun Woo Kim
机构
[1] Inha University,Division of Materials Science and Engineering
[2] Hanyang University,Division of Materials Science and Engineering
[3] Singapore University of Technology and Design,undefined
来源
Metals and Materials International | 2015年 / 21卷
关键词
semiconductors; fullerenes; chemical synthesis; transmission electron microscopy (TEM); raman spectroscopy;
D O I
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中图分类号
学科分类号
摘要
Hexagonal-boron nitride (h-BN) fullerenes were synthesized from a graphene oxide (GO) template by simultaneously heating the GO and B2O3 in the presence of NH3 gas. Transmission electron microscopy (TEM) observations revealed that a considerable amount of product had a fullerene-like nanostructure. Typical BN fullerenes have a polyhedral shape, being hollow nanocages. Lattice-resolved TEM and X-ray diffraction consistently demonstrated the formation of h-BN fullerenes. The FTIR spectrum exhibited absorption bands at approximately 800 and 1378 cm-1, which were related to the h-BN structure. The Raman spectra exhibited peaks at 1368 and 1399 cm-1, which can be related to BN sheets and BN fullerenes, respectively. The photoluminescence spectrum of the h-BN fullerenes taken at 8 K exhibited intense white-light emission. To reveal the origin of the broad emission band, which could be a superimposition of several peaks, we used a deconvolution procedure based on Gaussian functions. We proposed a growth mechanism of the h-BN fullerenes and verified it with a thermodynamic calculation. This work provides a cost-effective approach to synthesize fullerene-type boron nitride on a production scale.
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页码:950 / 955
页数:5
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