Impurity absorption and luminescence of CuGaSe2 crystals

被引：0
作者：
I. A. Ponomareva
A. Yu. Serov
I. V. Bodnar’
机构：
[1] St. Petersburg State University,Fock Institute of Physics
来源：
Physics of the Solid State | 2007年 / 49卷
关键词：
71.55.Ht; 78.55.Hx; 78.40.Ha;
D O I：
暂无
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学科分类号：
摘要：
A comparison of the experimental and calculated absorption spectra of CuGaSe2 crystals revealed the existence of two acceptor levels with ionization energies of 66 and 167 meV in the samples under study. It was found that the luminescence spectra of CuGaSe2 measured at 77 K exhibit four impurity-band transitions with impurity ionization energies of 66, 99, 136, and 190 meV. An analysis of the temperature dependence of the luminescence intensity in the temperature range 11–77 K revealed a band peaking at 1.671 eV due to the radiation of donor-acceptor pairs. The calculated sum of the ionization energies of the impurities responsible for the formation of donor-acceptor pairs and the temperature dependence of the relative intensities of impurity-band emission were used to determine the ionization energies of the corresponding donor and acceptor.
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页码：23 / 27
页数：4
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