Design of High Performance Si/SiGe Heterojunction Tunneling FETs with a T-Shaped Gate

被引：0
作者：
Wei Li
Hongxia Liu
Shulong Wang
Shupeng Chen
Zhaonian Yang
机构：
[1] Key Laboratory for Wide Band Gap Semiconductor Materials and Devices of Education,
[2] School of Microelectronics,undefined
[3] Xidian University,undefined
[4] School of Automation and Information Engineering,undefined
[5] Xi’an University of Technology,undefined
来源：
Nanoscale Research Letters | 2017年 / 12卷
关键词：
Band-to-band tunneling (BTBT); T-shaped gate; Tunneling field-effect transistor (TFET); Heterojunction;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
In this paper, a new Si/SiGe heterojunction tunneling field-effect transistor with a T-shaped gate (HTG-TFET) is proposed and investigated by Silvaco-Atlas simulation. The two source regions of the HTG-TFET are placed on both sides of the gate to increase the tunneling area. The T-shaped gate is designed to overlap with N+ pockets in both the lateral and vertical directions, which increases the electric field and tunneling rate at the top of tunneling junctions. Moreover, using SiGe in the pocket regions leads to the smaller tunneling distance. Therefore, the proposed HTG-TFET can obtain the higher on-state current. The simulation results show that on-state current of HTG-TFET is increased by one order of magnitude compared with that of the silicon-based counterparts. The average subthreshold swing (SS) of HTG-TFET is 44.64 mV/dec when Vg is varied from 0.1 to 0.4 V, and the point SS is 36.59 mV/dec at Vg = 0.2 V. Besides, this design cannot bring the sever Miller capacitance for the TFET circuit design. By using the T-shaped gate and SiGe pocket regions, the overall performance of the TFET is optimized.
引用
收藏
相关论文
共 79 条
[1]  
Wang PF(2004)Complementary tunneling transistor for low power application Solid State Electron 48 2281-2286
[2]  
Hilsenbeck K(2010)Low-voltage tunnel transistors for beyond CMOS logic Proc IEEE 98 2095-2110
[3]  
Nirschl T(2014)Further insights in TFET operation IEEE Trans Electron Devices 61 2893-2898
[4]  
Oswald M(2007)Tunneling field-effect transistors (TFETs) with subthreshold swing (SS) Less than 60 mV/dec IEEE Electron Device Lett 28 743-745
[5]  
Stepper C(2011)Heterojunction vertical band-to-band tunneling transistors for steep subthreshold swing and high on current IEEE Electron Device Lett 32 689-691
[6]  
Weis M(2016)Band engineering to improve average subthreshold swing by uppressing low electric field band-to-band tunneling with epitaxial tunnel layer funnel FET structure IEEE Trans Nanotechnol 15 74-79
[7]  
Seabaugh AC(2012)Design guideline of Si-based L-shaped tunneling field-effect transistors Jpn J Appl Phys 51 06FE09-1-06FE09-4
[8]  
Zhang Q(2016)Demonstration of L-shaped tunnel field-effect transistors IEEE Trans Electron Devices 63 1774-1778
[9]  
Villalon A(2014)Design of U-shape channel tunnel FETs with SiGe source regions IEEE Trans Electron Devices 61 193-197
[10]  
Carval GL(2016)Tunnel field-effect transistor with an L-shaped gate IEEE Electron Device Lett 37 839-842
12345678