Experimental research on damage and formation limits on porous silicon materials by electrochemical etching method

被引：0
|
作者：
Daohan Ge
Ahmed Rezk
Chengxiang Zhao
Zhou Hu
Liqiang Zhang
机构：
[1] Jiangsu University,Institute of Intelligent Flexible Mechatronics
[2] Changzhou University,Jiangsu Collaborative Innovation Centre of Photovoltaic Science and Engineering
[3] Nanjing University,National Laboratory of Solid State Microstructures
来源：
Journal of Materials Research | 2022年 / 37卷
关键词：
Microstructure; Porosity; Scanning electron microscopy (SEM); Porous silicon; Defects; Residual stress;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：876 / 886
页数：10
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