Thermoelectric Properties of NdGd1+xS3 Prepared by CS2 Sulfurization

被引:0
作者
Michihiro Ohta
Shinji Hirai
机构
[1] National Institute of Advanced Industrial Science and Technology (AIST),Energy Technology Research Institute
[2] Muroran Institute of Technology,Department of Materials Science and Engineering
来源
Journal of Electronic Materials | 2009年 / 38卷
关键词
Thermoelectric materials; rare-earth sulfides; CS; sulfurization; pressure-assisted reaction sintering; self-doping;
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摘要
Ternary rare-earth sulfides NdGd1+xS3, where 0 ≤ x ≤ 0.08, were prepared by sulfurizing Ln2O3 (Ln = Nd, Gd) with CS2 gas, followed by reaction sintering. The sintered samples have full density and homogeneous compositions. The Seebeck coefficient, electrical resistivity, and thermal conductivity were measured over the temperature range of 300 K to 950 K. All the sintered samples exhibit a negative Seebeck coefficient. The magnitude of the Seebeck coefficient and the electrical resistivity decrease systematically with increasing Gd content. The thermal conductivity of all the sintered samples is less than 1.9 W K−1 m−1. The highest figure of merit ZT of 0.51 was found in NdGd1.02S3 at 950 K.
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页码:1287 / 1292
页数:5
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